Peculiarities of Electronic Structure of Silicon–on–Insulator Structures and Their Interaction with Synchrotron Radiation
https://doi.org/10.17073/1609-3577-2014-2-81-86
Abstract
Structures with strained and unstrained silicon layers were studied by ultrasoft X−ray emission spectroscopy and X−ray absorption near edge structure spectroscopy with the use of synchrotron radiation techniques the SOI (silicon−on−insulator). Analysis of X−ray data has shown a noticeable transformation of the electron energy spectrum and local partial density of states distribution in valence and conduc- tion bands in the strained silicon layer of the SOI structure. USXES Si L2,3 spectra analysis revealed a decrease of the distance between the L′2v и L1v points in the valence band of the strained silicon layer as well as a shift of the first two maxima of the XANES first derivation spectra to the higher energies with respect to conduction band bottom Ec. At the same time the X−ray standing waves of synchrotron radiation (λ ~ 12−20 nm) are formed in the silicon−on−insulator structure with and
without strains of the silicon layer. Moreover the synchrotron radiation grazing angle θ changing by 2° leads to a change of the electromagnetic field phase to the opposite.
About the Authors
V. A. Terekhov
Voronezh State University, Universitetskaya Sq., Voronezh 394006, Russia
Russian Federation
Russian Federation
Dr. Sci. (Phys.–Math.), Professor
D. N. Nesterov
Voronezh State University, Universitetskaya Sq., Voronezh 394006, Russia
Russian Federation
Russian Federation
Post- graduate Student
E. P. Domashevskaya
Voronezh State University, Universitetskaya Sq., Voronezh 394006, Russia
Russian Federation
Russian Federation
Dr. Sci. (Phys.–Math.), Professor;
S. Y. Turishchev
Voronezh State University, Universitetskaya Sq., Voronezh 394006, Russia
Russian Federation
Russian Federation
Cand. Sci. (Phys.–Math.), Senior Researcher;
G. N. Kamaev
Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13 Lavrentieva Ave., Novosibirsk 630090, Russia
Russian Federation
Russian Federation
Cand.Sci.(Phys.–Math.),SeniorResearcher
A. Kh. Antonenko
Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13 Lavrentieva Ave., Novosibirsk 630090, Russia
Russian Federation
Russian Federation
Leading Engineer
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Review
For citations:
Terekhov V.A., Nesterov D.N., Domashevskaya E.P., Turishchev S.Y., Kamaev G.N., Antonenko A.Kh. Peculiarities of Electronic Structure of Silicon–on–Insulator Structures and Their Interaction with Synchrotron Radiation. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(2):81-86. (In Russ.) https://doi.org/10.17073/1609-3577-2014-2-81-86
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