Acoustic Properties of La3Ga5.3Ta0.5Al0.2O14 Crystal
https://doi.org/10.17073/1609-3577-2014-2-92-98
Abstract
Development and search for new advanced materials of the lanthanum gallium silicate group with unique thermal properties is of great importance for the development of acoustoelectronics based on volume and surface acoustic waves. The processes of surface acoustic wave excitation and propagation in the La3Ga5.3Ta0.5Al0.2O14 crystal was studied using a double−crystal X−ray diffractometer with a BESSY II synchrotron radiation source. The X−ray diffraction spectra of acoustically modulated crystals were used to measure the surface acoustic wave velocity and power flow angles in different acoustic cuts of the La3Ga5.3Ta0.5Al0.2O14 crystal.
About the Authors
D. V. Roshchupkin
Institute of Microelectronics Technology and High–Purity Materials Russian Academy of Sciences, 6 Academician Osip’yan Str.,Chernogolovka, Moscow Regiont 142432, Russia
Russian Federation
Russian Federation
Deputy Head (Science), Dr. Sci. (Phys.–Math.)
D. V. Irzhak
Institute of Microelectronics Technology and High–Purity Materials Russian Academy of Sciences, 6 Academician Osip’yan Str.,Chernogolovka, Moscow Regiont 142432, Russia
Russian Federation
Russian Federation
Cand. Sci. (Phys.–Math.), Senior Researcher
E. V. Emelin
Institute of Microelectronics Technology and High–Purity Materials Russian Academy of Sciences, 6 Academician Osip’yan Str.,Chernogolovka, Moscow Regiont 142432, Russia
Russian Federation
Russian Federation
Cand. Sci. (Phys.–Math.), Researcher
S. A. Sakharov
FOMOS Materials Co, 16 Buzheninova Str., Moscow 107023, Russia
Russian Federation
Russian Federation
Senior Researcher
A. N. Zabelin
FOMOS Materials Co, 16 Buzheninova Str., Moscow 107023, Russia
Russian Federation
Russian Federation
Senior Researcher
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Review
For citations:
Roshchupkin D.V., Irzhak D.V., Emelin E.V., Sakharov S.A., Zabelin A.N. Acoustic Properties of La3Ga5.3Ta0.5Al0.2O14 Crystal. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(2):92-98. (In Russ.) https://doi.org/10.17073/1609-3577-2014-2-92-98
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