FORMATION OF CROSS-CUTTING STRUCTURES WITH DIFFERENT POROSITY ON THICK SILICON WAFERS
https://doi.org/10.17073/1609-3577-2014-1-8-12
Abstract
Through three−layered structure has been formed on silicon wafers 500 microns thick by electrochemical etching in a solution of hydrofluoric acid without using additional deletions monocrystalline layers. The resulting structures are divided into two types. The first type pass−through structure comprises two outermost macroporous silicon layers 220—247,5 microns thick with a pore diameter 7—10 microns and an average mesoporous silica layer 5—60 microns thick with a pore diameter of 100—150 nm. The second type pass−through structure includes macroporous silicon layer 250 microns in thickness, interlocking in the depth of the silicon wafer to form a cavity the size of 4—8 microns. The developed technology will allow forming monolithic structures of membrane−electrode assembly microfuel elements in an easier and more reliable manner.
Supporting agencies: The work is done in accordance with the development plan of the Siberian Federal University (SFU)
About the Authors
V. A. Yuzova
Siberian Federal University
Russian Federation
Russian Federation
Professor
F. F. Merkushev
Siberian Federal University
Russian Federation
Posgraduate Student
Russian Federation
Posgraduate Student
E. A. Lyaykom
Siberian Federal University
Russian Federation
student
Russian Federation
student
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Review
For citations:
Yuzova V.A., Merkushev F.F., Lyaykom E.A. FORMATION OF CROSS-CUTTING STRUCTURES WITH DIFFERENT POROSITY ON THICK SILICON WAFERS. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(1):8-12. (In Russ.) https://doi.org/10.17073/1609-3577-2014-1-8-12
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