Tilt Boundary Formation in GeSi/Si (001) Vicinal Heterosystem | Kolesnikov | Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhnikii

ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)

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Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

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Kolesnikov A.V., Trukhanov E.M., Ilin A.S., Loshkarev I.D. Tilt Boundary Formation in GeSi/Si (001) Vicinal Heterosystem. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(2):148-151. (In Russ.) https://doi.org/10.17073/1609-3577-2014-2-148-151

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ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)

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About the Authors

A. V. Kolesnikov
Institute of Semiconductor Physics SB RAS, 13 Lavrenteva Ave., Novosibirsk 630090, Russia
Russian Federation

Cand. Sci. (Phys.–Math.), Senior Researcher

E. M. Trukhanov
Institute of Semiconductor Physics SB RAS, 13 Lavrenteva Ave., Novosibirsk 630090, Russia
Russian Federation

Dr. Sci. (Phys.–Math.), Leading Researcher

A. S. Ilin
Institute of Semiconductor Physics SB RAS, 13 Lavrenteva Ave., Novosibirsk 630090, Russia
Russian Federation

Engineer

I. D. Loshkarev
Institute of Semiconductor Physics SB RAS, 13 Lavrenteva Ave., Novosibirsk 630090, Russia
Russian Federation

Cand. Sci. (Phys.–Math.), Junior Researcher

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