Trimethyl(phenyl)silane — a Precursor for Gas Phase Processes of SiCx : H Film Deposition: Synthesis and Characterization
https://doi.org/10.17073/1609-3577-2014-3-199-205
Abstract
The technique of synthesis and purification of trimethyl(phenyl)silane PhSiMe3, allowing to obtain the product with high yield. Individuality of the product was confirmed by elemental analysis for C, H, Si. IR, UV and 1H NMR–spectroscopic studies, defined its spectral characteristics. Complex thermal analysis and thermogravimetric defined thermoanalytical behavior effects of PhSiMe3 in an inert atmosphere. Tensimetric studies have shown that the compound has sufficient volatility and thermal stability for use as a precursor in the process of chemical vapor deposition (CVD). The composition and temperature limits of the possible crystalline phase complexes in equilibrium with the gas phase of different composition has been determed by method of thermodynamic modeling. Calculated CVD diagrams allow us to select the optimum conditions of film deposition. The possibility of using trimethyl(phenyl)silane in CVD processes for producing dielectric films of hydrogenated silicon carbide has been demonstrated.
About the Authors
E. N. Ermakova
Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Acad. Lavrentjev Ave., Novosibirsk 630090, Russia
Russian Federation
Russian Federation
S. V. Sysoev
Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Acad. Lavrentjev Ave., Novosibirsk 630090, Russia
Russian Federation
Russian Federation
Cand. Sci. (Chem.), Senior Researcher
L. D. Nikulina
Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Acad. Lavrentjev Ave., Novosibirsk 630090, Russia
Russian Federation
Russian Federation
Cand. Sci. (Chem.), Senior Researcher
I. P. Tsyrendorzhieva
Favorskii Institute of Chemistry, SB RAS, 1 Favorskii Str., Irkutsk 664033, Russia
Russian Federation
Russian Federation
Cand. Sci. (Chem.), Researcher
V. I. Rakhlin
Favorskii Institute of Chemistry, SB RAS, 1 Favorskii Str., Irkutsk 664033, Russia
Russian Federation
Russian Federation
Dr. Sci. (Chem.), Professor, Chief Researcher
M. L. Kosinova
Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Acad. Lavrentjev Ave., Novosibirsk 630090, Russia
Russian Federation
Russian Federation
Cand. Sci. (Chem.), Head of Laboratory
F. A. Kuznetsov
Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Acad. Lavrentjev Ave., Novosibirsk 630090, Russia
Russian Federation
Russian Federation
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Review
For citations:
Ermakova E.N., Sysoev S.V., Nikulina L.D., Tsyrendorzhieva I.P., Rakhlin V.I., Kosinova M.L., Kuznetsov F.A. Trimethyl(phenyl)silane — a Precursor for Gas Phase Processes of SiCx : H Film Deposition: Synthesis and Characterization. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(3):199-205. (In Russ.) https://doi.org/10.17073/1609-3577-2014-3-199-205
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