For citations:
Ermakova E.N., Sysoev S.V., Nikulina L.D., Tsyrendorzhieva I.P., Rakhlin V.I., Kosinova M.L., Kuznetsov F.A. Trimethyl(phenyl)silane — a Precursor for Gas Phase Processes of SiCx : H Film Deposition: Synthesis and Characterization. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(3):199-205. (In Russ.) https://doi.org/10.17073/1609-3577-2014-3-199-205
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