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Remote and Conjugated Modeling of Heat–Mass Transfer and Defect Formation in Technological Processes

https://doi.org/10.17073/1609-3577-2015-1-31-36

Abstract

The advanced development of computer technology and software makes possible remote simulation of physical processes in technological processes using complex software systems. Its advantage is that the users (Clients) carry out the main creative work (the preparation and treatment of the calculated data) on their own computers, but the longtime calculations are executed by means of Internet access on a remote supercomputer (Server) where the software package is installed. The presented examples illustrate an application of CrystmoNet code to a number of tasks related to the conjugated simulation of Czochralski silicon single crystal growth. They include results of conjugated calculations of the hydrodynamic processes occurring in the melt taking into account its crystallization and the radiationconductive heat transfer in the entire volume of the crystal growth hot zone, as well as the thermal stresses and the distributions of intrinsic point defects in dislocationfree silicon single crystals. 

About the Authors

A. I. Prostomolotov
Institute for Problems in Mechanics (IPMech) of Russian Academy of Sciences, 101/1 prospekt Vernadskogo, Moscow 119526, Russia
Russian Federation

Leading Researcher, Dr. Sci. (Eng.)



N. A. Verezub
Institute for Problems in Mechanics (IPMech) of Russian Academy of Sciences, 101/1 prospekt Vernadskogo, Moscow 119526, Russia
Russian Federation

Cand. Sci. (Phys.−Math.), Senior Researcher



Kh. Kh. Ilyasov
Institute for Problems in Mechanics (IPMech) of Russian Academy of Sciences, 101/1 prospekt Vernadskogo, Moscow 119526, Russia
Russian Federation

Cand. Sci. (Phys.−Math.), Senior Researcher



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For citations:


Prostomolotov A.I., Verezub N.A., Ilyasov Kh.Kh. Remote and Conjugated Modeling of Heat–Mass Transfer and Defect Formation in Technological Processes. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2015;18(1):31-36. (In Russ.) https://doi.org/10.17073/1609-3577-2015-1-31-36

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ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)