BOUNDARY PROCESSES IN ELECTROLYTE — SILICON INTERFACE AREA DURING SELF–ORGANIZATION OF MOSAIC STRUCTURE OF 3D–ISLANDS OF POROUS SILICON NANOCRYSTALLITES AT LONG–TERM ANODE ETCHING OF P–SI (100) IN ELECTROLYTE WITH AN INTERNAL SOURCE OF CURRENT
https://doi.org/10.17073/1609-3577-2014-1-31-36
Abstract
The formation and self−organization of porous silicon (por-Si) surface mosaic structure at long anodic etching of p-type conductivity Si (100) (p-Si) in electrolytes with an internal power source has been considered. We show that the formation of 3D islets of mosaic structure nanocrystallites of por-Si occurs with the participation of the adsorbed deposited silicon atoms formed as a result of disproportioning reactions at etching of silicon single crystals, as is the case for epitaxial growth of nanocrystallites with molecular beam deposition of silicon atoms on А3В5 and Si semiconductor surface and their further spontaneous self−organization. We note the significant role of oxidation of the silicon surface in the formation and self−organization of a mosaic structure of por-Si during long-term anodic etching of p-Si (100) in HF : H2O2 electrolyte quantum−size and effects occurring in local areas of atomic rough surfaces real crystal silicon.
Supporting agencies: Work is performed within the program of basic researches of MOHPK (No. grant 3.8.2/257)
About the Authors
K. B. Tynyshtykbayev
Institute of Physics and Technology, 050032, Kazakhstan, Almaty, Ibragimov st. 11
Kazakhstan
Doctor of Engineering, Chief Researcher
Kazakhstan
Doctor of Engineering, Chief Researcher
Y. A. Ryabikin
Institute of Physics and Technology, 050032, Kazakhstan, Almaty, Ibragimov st. 11
Kazakhstan
Candidate of Physico−Mathematical Sciences, Leading Researcher
Kazakhstan
Candidate of Physico−Mathematical Sciences, Leading Researcher
S. Z. Tokmoldin
Institute of Physics and Technology, 050032, Kazakhstan, Almaty, Ibragimov st. 11
Kazakhstan
Doctor of Physico−Mathe ma tical Sciences, Director
Kazakhstan
Doctor of Physico−Mathe ma tical Sciences, Director
B. A. Rakymetov
Institute of Physics and Technology, 050032, Kazakhstan, Almaty, Ibragimov st. 11
Kazakhstan
Engineer
Kazakhstan
Engineer
T. Aytmukan
Institute of Physics and Technology, 050032, Kazakhstan, Almaty, Ibragimov st. 11
Kazakhstan
Engineer
Kazakhstan
Engineer
H. A. Abdullin
Al−Farabi Kazakh National University, 050040, Kazakhstan, Almaty, Al−Farabi av., 71
Kazakhstan
Doctor of Physico−Mathematical Sciences, Chief Researcher
Kazakhstan
Doctor of Physico−Mathematical Sciences, Chief Researcher
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Review
For citations:
Tynyshtykbayev K.B., Ryabikin Y.A., Tokmoldin S.Z., Rakymetov B.A., Aytmukan T., Abdullin H.A. BOUNDARY PROCESSES IN ELECTROLYTE — SILICON INTERFACE AREA DURING SELF–ORGANIZATION OF MOSAIC STRUCTURE OF 3D–ISLANDS OF POROUS SILICON NANOCRYSTALLITES AT LONG–TERM ANODE ETCHING OF P–SI (100) IN ELECTROLYTE WITH AN INTERNAL SOURCE OF CURRENT. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(1):31-36. (In Russ.) https://doi.org/10.17073/1609-3577-2014-1-31-36
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