Analysis of the Origins of Tellurium Inhomogeneity in the Gallium Antimonide Crystal Grown in the Space Experiment
https://doi.org/10.17073/1609-3577-2015-2-118-126
Abstract
Quantitative X−ray topography of GaSb : Te crystal, grown during unmanned Chinese space experiment has showed a high structural perfection in its greater area, which corresponds to the crystallization of a rounded interface. At the same time, the defects in the field of a face growth have been revealed after some time of the crystallization onset. The control of parameters during the growth process was absent. It was a reason for a reconstruction of the crystal growth history using a two−dimensional map of the measured Te concentrations in the crystal and mathematical modeling of the growth process, and taking into account the analysis of possible factors that influenced the growth crystal characteristics.
About the Authors
A. I. Prostomolotov
Institute for Problems in Mechanics (IPMech) of Russian Academy of Sciences
Russian Federation
Russian Federation
Leading Researcher, Dr. Sci. (Eng.),
101 block 1, Prospekt Vernadskogo, Moscow 119526
N. A. Verezub
Institute for Problems in Mechanics (IPMech) of Russian Academy of Sciences
Russian Federation
Russian Federation
Senior Researcher, Cand. Sci. (Phys.−Math.),
101 block 1, Prospekt Vernadskogo, Moscow 119526
A. E. Voloshin
A.V. Shubnikov Institute of Crystallography Russian Academy of Sciences
Russian Federation
Russian Federation
Header of Laboratory, Dr. Sci. (Phys.−Math.),
59 Leninskii Prospekt, Moscow, 119333
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Review
For citations:
Prostomolotov A.I., Verezub N.A., Voloshin A.E. Analysis of the Origins of Tellurium Inhomogeneity in the Gallium Antimonide Crystal Grown in the Space Experiment. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2015;18(2):118-126. (In Russ.) https://doi.org/10.17073/1609-3577-2015-2-118-126
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