Formation Of Dislocation Pileup by Frank–Read Source
https://doi.org/10.17073/1609-3577-2015-2-133-136
Abstract
Dislocation pileups play an important role in the formation and propagation of strain in single crystals and polycrystals. They are the main source of cracking. Dislocation pileups are often referred to as the cause of serrated plastic strain pattern and degradation of the external quantum efficiency of UV LEDs. A dynamic physical model describing the formation of dislocation pileup by Frank–Read source has been presented that allows characterizing not only the structure but also time parameters of pileups. We provide data on the dislocation pile−ups e.g. dislocation configuration in a pileup, number of dislocations in a pile−up as a function of external stress, formation time of new dislocation loops and time to source blocking by the opposite strain generated by pileup dislocations. We compare our experimental results for pileups formed by Frank–Read source with results for pileups of straight edge dislocations. A large calculation effort is required to take into account the interaction of pileup dislocations. To accelerate our calculations we conducted them in parallel runs using a Т−Edge−10 38−nuclei cluster.
About the Authors
V. V. Blagoveshchenskii
Kostroma State Nekrasov University
Russian Federation
Russian Federation
Professor, Dr. Sci. (Phys.−Math.), Associate Professor,
14 May 1 Str., Kostroma, 156961
I. G. Panin
Kostroma State Technological University
Russian Federation
Russian Federation
Professor, Dr. Sci. (Eng.), Associate Professor,
17 Dzerzhinsky Str., Kostroma 156005
D. S. Andrianov
Kostroma State Technological University
Russian Federation
Russian Federation
Graduate Student,
17 Dzerzhinsky Str., Kostroma 156005
S. N. Suslina
Kostroma State Technological University
Russian Federation
Russian Federation
Assistant,
17 Dzerzhinsky Str., Kostroma 156005
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Review
For citations:
Blagoveshchenskii V.V., Panin I.G., Andrianov D.S., Suslina S.N. Formation Of Dislocation Pileup by Frank–Read Source. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2015;18(2):133-136. (In Russ.) https://doi.org/10.17073/1609-3577-2015-2-133-136
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