Ge Distribution in Si0.9Ge0.1 Alloy Ingot Grown from Thin Melt Layer
https://doi.org/10.17073/1609-3577-2014-4-246-251
Abstract
We studied experimentally and theoretically the possibility to obtain a uniform single crystal of SiGe alloy enriched at the Si side. The content of the second component in a crystal 15 mm in diameter and 40 mm in length grown by the modified floating zone technique from the charge of 79.8 at.% Si and 20 at.% Ge composition with 0.2% B admixture has been investigated using selected area X−ray analysis in different points and in line scanning mode along and across the crystal axis. The longitudinal changes in the germanium concentration of proved to be well described by the analytical equation previously derived for conditions of Sb (Ga) doped Ge growth from a thin melt layer in the presence of a heater submerged into the melt. For a more accurate description of the experimental data we made allowance for the change in the melt layer thickness between the growing crystal and the bottom of the submerged heater. The lateral distribution of the second component, not exceeding 5% over a diameter of the crystal, can be significantly improved by reducing the curvature of the phase interface during the growth.
About the Authors
M. Gonik
Centre for Material Researches «Photon», 10 Cheska Lipa Str., Aleksandrov, Vladimir Region, 601655 Russia
Russian Federation
Russian Federation
Cand. Sci. (Eng.), Director
A. Cröll
Institute för Geosciences of University of Freiburg, Hermann−Herder−Straβe 5, 79104 Freiburg, Germany
Germany
Germany
Prof. Dr. rer. nat., Dipl.−Min., Director of Institute
A. Wagner
Institute för Inorganic and Analytical Chemistry, Albertstraβe 21, D−79104 Freiburg, Germany
Germany
Germany
PhD, student
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Review
For citations:
Gonik M., Cröll A., Wagner A. Ge Distribution in Si0.9Ge0.1 Alloy Ingot Grown from Thin Melt Layer. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(4):246-251. (In Russ.) https://doi.org/10.17073/1609-3577-2014-4-246-251
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