Distribution of D1 Dislocation Luminescence Centers in Si+–Implanted Silicon and the Photoluminescence Model
https://doi.org/10.17073/1609-3577-2014-4-252-256
Abstract
Using step−by−step removal of silicon layers, in which dislocation−related photoluminescence is observed after Si+ (100 keV, 1 ·1015 cm−2) ion implantation followed by high−temperature annealing in a chlorine−containing atmosphere, it has been found that a majority of dislocation−related centers of luminescence at ~ 1,5 μm (D1 line) is localized at the depths of Si+ ion ranges. Cross−sectional electron microscopy shows that the dislocations introduced by the implantation treatment (implantation plus annealing) penetrate to depths of ~ 1μm. A phenomenological model of the D1−line dislocation−related luminescence is developed based on the assumption that the K−centers and modified A−centers located in the atmospheres of dislocations are responsible for this luminescence line. The temperature dependence of luminescence intensity calculated on the basis of the model fits well the experimental data for the D1 line.
About the Authors
S. N. Nagornykh
R.E. Alekseev Nizhny Novgorod State Technical University, 24 Minina Str., Nizhny Novgorod 603950, Russia
Russian Federation
Russian Federation
Associate Professor, Cand. Sci. (Phys.–Math.)
V. I. Pavlenkov
Arzamas Branch of the N. I. Lobachevsky Nizhny Novgorod State University, 36 K. Marx Str., Arzamas, Nizhny Novgorod Region 607220, Russia
Russian Federation
Russian Federation
Deputy Dean, Cand. Sci. (Phys.–Math.)
D. I. Tetelbaum
Physical and Technical Research Institute at the N.I. Lobachevsky Nizhny Novgorod State University, 23 Bldg 3, Gagarina Ave., Nizhny Novgorod 603950, Russia
Russian Federation
Russian Federation
Leading Researcher, Dr. Sci. (Phys.– Math.)
A. N. Mikhailov
Physical and Technical Research Institute at the N.I. Lobachevsky Nizhny Novgorod State University, 23 Bldg 3, Gagarina Ave., Nizhny Novgorod 603950, Russia
Russian Federation
Russian Federation
Head of Laboratory, Cand. Sci. (Phys.–Math.)
A. I. Belov
Physical and Technical Research Institute at the N.I. Lobachevsky Nizhny Novgorod State University, 23 Bldg 3, Gagarina Ave., Nizhny Novgorod 603950, Russia
Russian Federation
Russian Federation
Researcher, Cand. Sci. (Phys.–Math.)
D. S. Korolev
R.E. Alekseev Nizhny Novgorod State Technical University, 24 Minina Str., Nizhny Novgorod 603950, Russia
Russian Federation
Russian Federation
Assistant, Postgraduate Student
A. N. Shushunov
Physical and Technical Research Institute at the N.I. Lobachevsky Nizhny Novgorod State University, 23 Bldg 3, Gagarina Ave., Nizhny Novgorod 603950, Russia
Russian Federation
Russian Federation
Junior Researcher
A. I. Bobrov
R.E. Alekseev Nizhny Novgorod State Technical University, 24 Minina Str., Nizhny Novgorod 603950, Russia
Russian Federation
Russian Federation
Engineer, Postgraduate Student
D. A. Pavlov
R.E. Alekseev Nizhny Novgorod State Technical University, 24 Minina Str., Nizhny Novgorod 603950, Russia
Russian Federation
Russian Federation
Head of Department, Dr. Sci. (Phys.–Math.)
E. I. Shek
A.F. Ioffe Physical–Technical Institute of the Russian Academy of Sciences, 26 Politekhnicheskaya Str., St. Petersburg 194021, Russia
Russian Federation
Russian Federation
Senior Researcher, Cand. Sci. (Phys.–Math.)
References
1. Sobolev N. A. Defect engineering in the implantation−based technology of silicon light−emitting structures with dislocation−related luminescance (Review). Fizika i Tekhnika Poluprovodnikov = Semiconductors, 2010, vol. 44, no. 1. pp. 3—25. (In Russ.)
2. Sobolev N. A., Emel’yanov A. M., Sakharov V. I., Serenkov I. T., Shek E. I., Tetel’baum D. I. Dislocation−related luminescence in single crystal silicon caused by silicon ion implantation and subsequent annealing. Fizika i Tekhnika Poluprovodnikov = Semiconductors, 2007, vol. 41, no. 5. pp. 555—557. (In Russ.)
3. Sobolev N. A., Kalyadin A. E., Kyutt R. N., Sakharov V. I., Serenkov I. T., Shek E. I., Afrosimov V. V., Tetel’baum D. I. Photoluminescence in silicon implanted by silicon ions at amorphizing doses. Fizika i Tekhnika Poluprovodnikov = Semiconductors, 2011, vol. 45, no. 9. pp. 1182—1187. (In Russ.)
4. Mikhailov A. N., Belov A. I., Korolev D. S., Timofeeva A. O., Vasiliev V. K., Shushunov A. N., Bobrov A. I., Pavlov D. A., Tetel’baum D. I., Shek E. I. Effect of ion doping on photoluminescence of silicon originated from dislocations formed by Si+ ion implantation. Fizika i Tekhnika Poluprovodnikov = Semiconductors, 2014, vol. 48, no. 2, pp. 212—216. (In Russ.)
5. Sobolev N. A., Kalyadin A. E., Shek E. I., Vdovin V. I., Tetel’baum D. I., Khirunenko L. I. Luminescent and structural properties of self−implanted silicon layers in relation to their fabrication conditions. Solid State Phenomena, 2011, vol. 178/179, pp. 341—346. DOI: 10.4028/www.scientific.net/SSP.178−179.341
6. Osipyan Yu. A. Elektronnye svoistva dislokatsii v poluprovodnikakh [Electronic properties of dislocations in semiconductors]. Moscow: Editorial URSS, 2000. 320 p. (In Russ.)
7. Blumenau A. T., Jones R., Öberg S., Briddon P. R., Frauenheim T. Dislocation related photoluminescence in silicon. Phys. Rev. Lett., 2001, vol. 87, pp. 187404.
8. Reivi K. Defekty i primesi v poluprovodnikovom kremnii [Defects and impurities in semiconductor silicon]. Moscow: Mir, 1984. − 475 p. (In Russ.)
9. Ziegler J. F., Ziegler M. D., Biersack J. P. SRIM − The stopping and range of ions in matter (2010). Nucl. Instr. Meth. Phys. Res. B, 2010, vol. 268, pp. 1818—1823.
10. Sobolev N. A. Inzheneriya defektov v tekhnologii poluprovodnikov [Engineering defects in semiconductor technology]. Moscow: Lambert Academic Publishing, 2011. 252 p. (In Russ.)
11. Sobolev N. A., Emel’yanov A. M., Zabrodskii V. V., Zabrodskaya N. V., Sukhanov V. L., Shek E. I. Silicon light−emitting diodes with dislocation−related luminescence at room temperature prepared by Erbium ion implantation and gaseous−phase evaporation of polycrystalline silicon layers heavy doped with boron and phosphorus.
12. Fizika i Tekhnika Poluprovodnikov = Semiconductors, 2007, vol. 41, no. 5. pp. 635—638. (In Russ.)
13. Dolgolenko A. P. Electronic configurations of the levels of divacancies in silicon. Voprosy atomnoi nauki i tekhniki. Ser. Fizika radiatsionnykh povrezhdenii i radiatsionnoe materialovedenie = Problems of atomic science and technology: Physics of radiation damages and effects in solids. 2012, vol. 5(81), pp. 13—20. (In Russ.)
Review
For citations:
Nagornykh S.N., Pavlenkov V.I., Tetelbaum D.I., Mikhailov A.N., Belov A.I., Korolev D.S., Shushunov A.N., Bobrov A.I., Pavlov D.A., Shek E.I. Distribution of D1 Dislocation Luminescence Centers in Si+–Implanted Silicon and the Photoluminescence Model. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(4):252-256. (In Russ.) https://doi.org/10.17073/1609-3577-2014-4-252-256
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