Preview

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

Advanced search
Fullscreen

For citations:


Nagornykh S.N., Pavlenkov V.I., Tetelbaum D.I., Mikhailov A.N., Belov A.I., Korolev D.S., Shushunov A.N., Bobrov A.I., Pavlov D.A., Shek E.I. Distribution of D1 Dislocation Luminescence Centers in Si+–Implanted Silicon and the Photoluminescence Model. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(4):252-256. (In Russ.) https://doi.org/10.17073/1609-3577-2014-4-252-256



Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.


ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)