For citations:
Nagornykh S.N., Pavlenkov V.I., Tetelbaum D.I., Mikhailov A.N., Belov A.I., Korolev D.S., Shushunov A.N., Bobrov A.I., Pavlov D.A., Shek E.I. Distribution of D1 Dislocation Luminescence Centers in Si+–Implanted Silicon and the Photoluminescence Model. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(4):252-256. (In Russ.) https://doi.org/10.17073/1609-3577-2014-4-252-256
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