Porous Silicon Based High Efficiency Photoelectrodes
https://doi.org/10.17073/1609-3577-2014-4-268-277
Abstract
The use of por−Si electrodes promotes the separation of water molecules inside por−Si nanopores and efficient evolution of hydrogen during water electrolysis. The por−Si/c−Si heterostructure allows solving one of the problems of water photoelectrolysis on silicon electrodes, i.e. their energetic insufficiency. Combined electrochemical and physical deposition of Ni on the surface of por−Si, formation of NiSi−silicide coatings on the surface of the pores and subsequent production of por−Si photoelectrodes based on the NiSi/por−Si/c−Si/Al heterostructure results in an improvement of their corrosion resistance to oxidation and anodic dissolution, an increase in efficiency of hydrogen generation and enhancement of the photoelectrodes’ lifetime..
About the Authors
K. B. Tynyshtykbayev
Institute of Physics and Technology, 050032, Kazakhstan, Almaty, Ibragimov Str. 11
Russian Federation
Russian Federation
Dr. Sci. (Eng.), Professor, Chief Researcher
V. B. Glazman
Institute of Physics and Technology, 050032, Kazakhstan, Almaty, Ibragimov Str. 11
Russian Federation
Russian Federation
Researcher
D. Muratov
Institute of Physics and Technology, 050032, Kazakhstan, Almaty, Ibragimov Str. 11
Russian Federation
Russian Federation
Engineer
B. Rakhmetov
Institute of Physics and Technology, 050032, Kazakhstan, Almaty, Ibragimov Str. 11
Russian Federation
Russian Federation
Engineer
N. S. Tokmoldin
Institute of Physics and Technology, 050032, Kazakhstan, Almaty, Ibragimov Str. 11
Russian Federation
Russian Federation
PhD, Head of the Laboratory
S. Zh. Tokmoldin
Institute of Physics and Technology, 050032, Kazakhstan, Almaty, Ibragimov Str. 11
Russian Federation
Russian Federation
Dr. Sci. (Phys.−Math.), Director
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Review
For citations:
Tynyshtykbayev K.B., Glazman V.B., Muratov D., Rakhmetov B., Tokmoldin N.S., Tokmoldin S.Zh. Porous Silicon Based High Efficiency Photoelectrodes. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(4):268-277. (In Russ.) https://doi.org/10.17073/1609-3577-2014-4-268-277
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