FEATURES OF SILICON DOPING BY THE THERMOMIGRATION METHOD
https://doi.org/10.17073/1609-3577-2015-3-179-188
Abstract
Characteristics of crystal doping with electrically active impurities by the thermomigration method for two− and three−component liquid zones in comparison with diffusion alloying (for the example of silicon) have been analyzed.
We have found that the concentration range of doping for the two− component migration zone is much narrower than the range of diffusion doping. Introduction of a third component into the liquid phase allows extending the range of doping thermomigration to values exceeding the diffusion doping range for the same impurity. For silicon crystals this technological advantage of thermomigration is achieved with the use of three zones, GaxAl1−xSi and SnxAl1−xSi.
We show that the speed of crystal doping by the thermomigration method in technologically relevant situations is by orders of magnitude higher than that of diffusion alloying. Thermomigration doped layers with steadily moving liquid zones have higher structural perfection than diffusion doped layers.
We show that the thermomigration alloying method can be used in the technology of semiconductor device structures, provided that their planar dimensions and thickness are tens micrometers or more. Quantitative results obtained for the example of liquid zone migration in silicon, but the features of thermomigration as a doping method are true for other semiconductor materials.
About the Authors
V. N. Lozovsky
South−Russian state Polytechnic University, Novocherkassk
Russian Federation
Russian Federation
Vladimir N. Lozovsky — Dr. Sci. (Phys.−Math.), Professor
L. S. Lunin
South−Russian state Polytechnic University, Novocherkassk
Russian Federation
Leonid S. Lunin — Dr. Sci. (Phys.−Math.), Head of the Department of Nanotechnology in Electronics
Russian Federation
Leonid S. Lunin — Dr. Sci. (Phys.−Math.), Head of the Department of Nanotechnology in Electronics
B M. Seredin
South−Russian state Polytechnic University, Novocherkassk
Russian Federation
Russian Federation
Boris M. Seredin — Cand. Sci. (Eng.), Associate Professor
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Review
For citations:
Lozovsky V.N., Lunin L.S., Seredin B.M. FEATURES OF SILICON DOPING BY THE THERMOMIGRATION METHOD. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2015;18(3):179-188. (In Russ.) https://doi.org/10.17073/1609-3577-2015-3-179-188
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