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DEVELOPMENT OF CLEARING TECHNIQUE OF METALLURGICAL SILICON TO SOLAR GRADE SILICON

https://doi.org/10.17073/1609-3577-2015-3-189-194

Abstract

Experimental results demonstrating the possibility of obtaining solar grade silicon by recrystallization of metallurgical silicon in fusible metals, e.g. tin, and pulling of single crystal silicon ingot obtained from silicon scales by the Czochralski method have been presented. Experiments for the purification of a fusible metal (tin) after the end of a cycle of silicon scales obtaining for the purpose of its reuse have been carried out. We purified tin by vacuum decontamination of tin melt, its filtration and finally zone recrystallization. Qualitative and quantitative analysis of the initial materials (silicon and tin) and their structure after sequential stages of the technological process has  been carried out by X−ray fluorescent analysis  on an Elvax light device. The structural features of the  silicon scales have  been examined using  scanning electron microscopy on a REMMA106I device. The conductivity  type and the electrical resistivity of the obtained single crystal silicon ingot have been measured using the four−probe method on a PIUS−1UM−K device. We show that the composition of the pulled single crystal ingot is not worse than 99.999 wt.% Si, it has the n type of conductivity  and its electrical resistivity is not less than 2.0 Оhm•сm. These parameters meet the requirements to solar grade silicon and confirm the possibility of its obtaining from metallurgical silicon by recrystallization in fusible metals, e.g.  tin.

About the Authors

I. I. Maronchuk
Sevastopol State University, Sevastopol
Russian Federation

Igor  I. Maronchuk  — Cand.  Sci.  (Eng.),  Head of the  Research Laboratory of Applied Physics and Nanotechnology in Energy



I. E. Maronchuk
Sevastopol State University, Sevastopol
Russian Federation

Igor  E. Maronchuk — Dr. Sci.  (Eng.),  Professor, Chief  Researcher



D. D. Sanikovich
Sevastopol State University, Sevastopol
Russian Federation

Daria  D. Sanikovich — Researcher



I. B. Shirokov
Sevastopol State University, Sevastopol
Russian Federation

Igor B. Shirokov — Dr. Sci. (Eng.),  Professor, Head of the  Department of Electronic Technology



References

1. Gribov B. G., Zinov’ev K. V. New Technologies of Polycrystalline Silicon Production for Solar Industry. Semiconductors. 2008, vol. 42, no. 13, pp. 1475—1479. DOI: 10.1134/S1063782608130046

2. Jeger−Waldau A. PV Status Report 2013. Luxembourg: Publications Office of the European Union, 2013. 58 p.

3. Jeger−Waldau A. PV Status Report 2014. Luxembourg: Publications Office of the European Union, 2014. 50 p.

4. Gribov B. G., Zinov’ev K. V. Preparation of high−purity silicon for solar cells. Inorganic materials. 2003, vol. 39, no. 7, pp. 653—662. DOI: 10.1023/A:1024553420534

5. Yarkin V. N., Kisarin O. A., Rekov Yu. V., Chervonyi I. F. Silicon for the solar industry: competition, the impact of market, problems of development. Teoriya i praktika metallurgii = Theory and practice of metallurgy. 2010, no. 1/2, pp. 114—125. (In Russ.)

6. Gadalova O., Kotenko A., Kravchenko A., Mircurbanov Kh., Odinokov V. Setting up of Electronic Grade Polysilicon Production from Monosilane. Nanoindustriya = Nanoindustry. 2010, no. 1, pp. 4—9. (In Russ.)

7. O’Mara W. C. Handbook of semiconductor silicon technology. Park Ridge (N.J., U.S.A): Noyes Publication, 1990. 795 p.

8. Patent 3963838 (USA). Method of operating a quarz fluidized bed reactor for the production of silicon. B. R. Martin H. S. N. Setty, D. J. Wangler, C. L. Yaws, 1976.

9. Campillo J., Foster S. Global solar photovoltaic industry analysis with focus on the Chinese market. Vеsteras (Sweden): The Departamed of Public Technology Mеlardolen University, 2008. 83 р.

10. Jeger−Waldau A. PV Status Report 2012. Luxembourg: Publications Office of the European Union, 2012. 45 p.

11. Aratani F., Fukai M., Sakaguchi Y., Yuge N., Baba H., Suhara S., Habu Y., Yoshiyagawa M., Ishizaki M., Hattori A., Kawahara T., Higuchi T., Shimomura T. Production of SOG−Si by carbothermic reduction of high purity silica. 9th European Photovoltaic Solar Energy Conf. Freiburg, 1989. Pp. 462—465.

12. Belov E. P., Lebedev E. N., Grigorash Y. P., Gorbunov A. I., Litvinenko I. N. Monosilan v tekhnologii poluprovodnikovykh materialov [The monosilane in the technology of semiconductor materials]. Moscow: NIITEKHIM, 1989. 72 p. (In Russ.)

13. Patent 90286 (UA). Aluminothermic method of producing silicon of high purity. I. E. Maronchuk, I. I. Maronchuk, T. F. Kulyutkina. 2010.

14. Patent 84653 (UA). Method of purification of metallurgical silicon. I. E. Maronchuk, I. I. Maronchuk, T. F. Kulyutkina, F. L. Komar, 2008.

15. Patent 94180 (UA). Method of cleaning silicon technical purity. I. E. Maronchuk, I. I. Maronchuk, T. F. Kulyutkina, 2011.

16. Patent 5856B (LT). Method of producing pure silicon. I. E. Maronchuk, I. I. Maronchuk, T. F. Kulyutkina, R. Virbickas, A. Aperavicius, 2012.

17. GOST 19658−81. Kremnii monokristallicheskii v slitkakh [Monocrystalline silicon in ingots]. Moscow: Izd−vo standartov, 2001. 57 p. (In Russ.)


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For citations:


Maronchuk I.I., Maronchuk I.E., Sanikovich D.D., Shirokov I.B. DEVELOPMENT OF CLEARING TECHNIQUE OF METALLURGICAL SILICON TO SOLAR GRADE SILICON. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2015;18(3):189-194. (In Russ.) https://doi.org/10.17073/1609-3577-2015-3-189-194

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