EFFECT OF SIC SUBSTRATE PROPERTIES ON STRUCTURAL PERFECTION AND ELECTRICAL PARAMETERS OF ALGAN/G LAYERS
https://doi.org/10.17073/1609-3577-2015-3-221-228
Abstract
We have analyzed the effect of volume and surface defects SiC substrates on structure and some electrophysical parameters of AlGaN/GaN epitaxial layer heterostructures grown on them. Regions with internal stresses usually induced by carbon rich disk−shaped inclusions were detected in the initial substrates. We show experimentally that the presence of internal stresses in SiC could affect the microroughness of epitaxial films in regions above stressed areas. Abrupt deterioration of electrophysical parameters was observed in regions of epitaxial films growing above areas with internal stresses in the substrate. AlGaN/GaN layers contain impurities delivered to their bulk during epitaxy or preparatory operations.
About the Authors
K. L. Enisherlova
JSC «S&PE «Pulsar», Moscow
Russian Federation
Russian Federation
Kira L. Enisherlova —Dr. Sci. (Eng.), Head of Laboratory
T. F. Rusak
JSC «S&PE «Pulsar», Moscow
Russian Federation
Russian Federation
Tatyana F. Rusak — Senior Researcher
V. I. Korneev
JSC «S&PE «Pulsar», Moscow
Russian Federation
Russian Federation
Vyacheslav I. Korneev
A. N. Zazulina
JSC «S&PE «Pulsar», Moscow
Russian Federation
Russian Federation
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Review
For citations:
Enisherlova K.L., Rusak T.F., Korneev V.I., Zazulina A.N. EFFECT OF SIC SUBSTRATE PROPERTIES ON STRUCTURAL PERFECTION AND ELECTRICAL PARAMETERS OF ALGAN/G LAYERS. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2015;18(3):221-228. (In Russ.) https://doi.org/10.17073/1609-3577-2015-3-221-228
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