DIAGNOSTICS OF TECHNOLOGICAL CHARACTERISTICS OF HIGH–POWER TRANSISTORS USING RELAXING IMPEDANCE SPECTROMETRY OF THERMAL PROCESSES

The efficient method of determining thermal parameters in high-power field-effect transistors has been developed and tested based on a study of transient processes during self heating by direct current. With the developed relaxation spectrometer of thermal processes differential distribution profiles of thermal resistance of KP723G transistors have been investigated which were selected in accordance with the regimes of setting of their crystals. Thermal resistance spectra have been obtained from the analysis of time−dependent dynamic thermal impedance using a new non−destructive method of differential spectroscopy using higher order derivatives (order 3). We present both continuous (integral) and discrete spectra of the distribution of internal thermal resistance in the transistors and the value of the junction/case thermal resistance. Thermal characteristics of the KP723G transistors and their imported counterparts IRLZ44 and IRLB3036 have been determined. The method of determining the active area of devices has been developed and its decrease during heating has been shown. The proposed methodology is useful in solving technological problems of forming the setting layers of crystals and intermediate layers between a crystal and a heat sink and also for the development of thermal models in SPICE modeling of powerful MOSFETs and diode emitters.

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