RADIATION INDUCED DEGRADATION OF CMOS OPERATIONAL AMPLIFIERS AT DIFFERENT DOSE RATES AND TEMPERATURES
https://doi.org/10.17073/1609-3577-2015-4-291-296
Abstract
The degradation of CMOS operational amplifiers with bipolar and CMOS input stages under irradiation at different dose rates and temperatures has been investigated. We show that such circuits can be susceptible to enhanced low dose rate and temporal degradation. Moreover, some features inherent to radiation response of bipolar devices have been revealed in operational amplifiers which contained CMOS elements only, for example, an increase in degradation with the temperature applied during irradiation. This is not typical for most CMOS devices. Our results suggest that the test procedures for devices and integrated circuits containing bipolar and CMOS elements should combine existing test approaches developed for the radiation testing of bipolar and CMOS devices. We have also shown that ionizing current generated by irradiation can affect the input current of operational amplifiers with CMOS input stages as measured during testing. This current can be estimated as the difference between input currents measured during irradiation and immediately after an interruption of irradiation.
About the Authors
K. I. Tapero
Research Institute of Scientific Instruments;
National University of Science and Technology «MISIS»
Russian Federation
Konstatntin I. Tapero — Cand. Sci. (Phys.−Math.), Associate Professor
Russian Federation
Konstatntin I. Tapero — Cand. Sci. (Phys.−Math.), Associate Professor
A. S. Petrov
Research Institute of Scientific Instruments
Russian Federation
Russian Federation
A. S. Petrov — Senior Engineer
8 Turayevo, Lytkarino, Moscow region 140080
V. N. Ulimov
Research Institute of Scientific Instruments
Russian Federation
Russian Federation
Viktor N. Ulimov — Dr. Sci. (Eng.), Professor, Deputy Director
8 Turayevo, Lytkarino, Moscow region 140080
References
1. Pease R. L., Schrimpf R. D., Fleetwood D. M. ELDRS in bipolar linear circuits: a review. IEEE Trans. Nucl. Sci. 2009, vol. 56, no. 4, pp. 1894—1908.
2. Shaneyfelt M. R., Schwank J. R., Witczak J. R., Fleetwood D. M., Pease R. L., Winokur P. S., Riewe L. C., Hash G. L. Thermal− stress effects and enhanced low dose rate sensitivity in linear bipolar ICs. IEEE Trans. Nucl. Sci. 2000, vol. 47, no. 6, pp. 2539—2545.
3. Schrimpf R. D. Physics and hardness assurance for bipolar technologies. 2001 IEEE NSREC Short Course Notes. 2001, pp. IV− 1—IV−67.
4. McClure S., Pease R. L., Will W., Perry G. Dependence of total dose response of bipolar linear microcircuits on applied dose rate. IEEE Trans. Nucl. Sci. 1994, vol. 41, no. 6, pp. 2544—2549.
5. Johnston A. H., Swift G. M., Rax B. G. Total dose effects in conventional bipolar transistors and linear integrated circuits. IEEE Trans. Nucl. Sci. 1994, vol. 41, no. 6, pp. 2427—2436.
6. Beaucour J. T., Carriere T., Gach A., Laxague D. Total dose effects on negative voltage regulator. IEEE Trans. Nucl. Sci. 1994, vol. 41, no. 6, pp. 2420—2426.
7. Chen X. J., Barnaby H. J., Adell P., Pease R. L., Vermeire B., Holbert K. E. Modeling the dose rate response and the effects of hydrogen in bipolar technologies. IEEE Trans. Nucl. Sci., 2009, vol. 56, no. 6, pp. 3196—3202.
8. Tapero K. I., Petrov A. S., Chubunov P. A., Ulimov V. N., Anashin V. S. Comparison of irradiation at low dose rate and irradiation at elevated temperature to reveal ELDRS in bipolar linear circuits. 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS). 2015, pp. 1—5. DOI: 10.1109/RADECS.2015.7365593
9. Schwank J. R. Total dose effects in MOS Devices. 2002 IEEE NSREC Short Course Notes. 2002, pp. III−1—III−123.
10. Fleetwood D. M., Winokur P. S., Schwank J. R. Using laboratory X−ray and Co−60 irradiations to predict CMOS device response in strategic and space environments. IEEE Trans. Nucl. Sci. 1988, vol. 35, no. 6, pp. 1497—1505.
11. Schwank J. R., Winokur P. S., McWhorter P. J., Sexton F. W., Dressendorfer P. V., Turpin D. C. Physical mechanisms contributing to device rebound. IEEE Trans. Nucl. Sci. 1984, vol. 31, no. 6, pp. 1434—1438.
12. Lelis A. J., Boesch H. E., Oldham T. R., McLean F. B. Reversibility of trapped hole annealing. IEEE Trans. Nucl. Sci. 1988, vol. 35, no. 6, pp. 1186—1191.
13. Lelis A. J., Oldham T. R., DeLancey W. M. Response of interface traps during high−temperature anneals. IEEE Trans. Nucl. Sci. 1991, vol. 38, no. 6, pp. 1590—1597.
14. Hahn A. Application of rail−to−rail operational amplifiers. Application report SLOA039A. 1999. URL: http://www.ti.com/lit/ an/sloa039a/sloa039a.pdf.
15. Petrov A. S., Tapero K. I., Ulimov V. N. Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing. Microelectronics Reliability. 2014, vol. 54, pp. 1745—1748.
16. Witczak S. C., Schrimpf R. D., Galloway K. F., Fleetwood D. M., Pease R. L., Puhl J. M., Schmidt D. M., Combs W. E., Suehle J. S. Accelerated tests for simulating low dose rate gain degradation of lateral and substrate pnp bipolar junction transistors. IEEE Trans. Nucl. Sci. 1996, vol. 43, no. 6, pp. 3151—3160.
17. Witczak S. C., Schrimpf R. D., Fleetwood D. M., Galloway K. F., Lacoe R. C., Mayer D. C., Puhl J. M., Pease R. L., Suehle J. S. Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures. IEEE Trans. Nucl. Sci. 1997, vol. 44, no. 6, pp. 1989—2000.
18. Romanenko A. A. Effect of low dose rate ionizing irradiation on bipolar devices and integrated circuits. Voprosy atomnoi nauki i tekhniki. Seriya: Fizika radiatsionnogo vozdeistviya na radioelektronnuyu apparaturu = Questions of atomic science and technique. Series: Physics of radiation effects on radio−electronic equipment. 2002, no. 4, pp. 121—132. (In Russ.)
19. Petrov A. S., Petrov M. S., Tapero K. I., Ulimov V. N., Meshchurov O. V., Romanenko A. A., Anashin V. S., Chubunov P. A. Application of the test stand of control the radiation hardness of electronic components for tests of bipolar operational amplifiers. Voprosy atomnoi nauki i tekhniki. Seriya: Fizika radiatsionnogo vozdeistviya na radioelektronnuyu apparaturu = Questions of atomic science and technique. Series: Physics of radiation effects on radio−electronic equipment. 2013, no. 1, pp. 14—17. (In Russ.)
20. Tapero K. I. Petrov A. S., Ulimov V. N., Chlenov A. M. Features of radiation tests of analogue bipolar integrated circuits considering ELDRS. Voprosy atomnoi nauki i tekhniki. Seriya: Fizika radiatsionnogo vozdeistviya na radioelektronnuyu apparaturu = Questions of atomic science and technique. Series: Physics of radiation effects on radio−electronic equipment. 2013, no. 4, pp. 5—10. (In Russ.)
21. Tapero K. I., Ulimov V. N., Chlenov A. M. Radiatsionnye effekty v kremnievykh integral’nykh skhemakh kosmicheskogo primeneniya [Radiation effects in silicon integrated circuits intended for space application]. Moscow: BINOM. Laboratoriya znanii, 2012. 304 p. (In Russ).
22. Tapero K. I., Didenko S. I. Osnovy radiatsionnoi stoikosti izdelii elektronnoi tekhniki: radiatsionnye effekty v izdeliyakh elektronnoi tekhniki [Basics of radiation hardness of electron devices and integrated circuits: radiation effects in electron devices and integrated circuits]. Moscow: Izd. dom MISiS, 2013. 349 p. (In Russ.)
23. Scarpa A., Paccagnella A., Montera F., Ghibaudo G., Pananakakis G., Ghidini G., Fuochi P. G. Ionizing radiation induced leakage current on ultra−thin gate oxides. IEEE Trans. Nucl. Sci. 1997, vol. 44, no. 6, pp. 1818—1825.
24. Ceschia M., Paccagnella A., Cester A., Scarpa A., Ghidini G. Radiation induced leakage current and stress induced leakage current in ultra−thin gate oxides. IEEE Trans. Nucl. Sci. 1998, vol. 45, no. 6, pp. 2375—2382
Review
For citations:
Tapero K.I., Petrov A.S., Ulimov V.N. RADIATION INDUCED DEGRADATION OF CMOS OPERATIONAL AMPLIFIERS AT DIFFERENT DOSE RATES AND TEMPERATURES. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2015;18(4):291-296. (In Russ.) https://doi.org/10.17073/1609-3577-2015-4-291-296
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