Specifics of fabrication of Ohmic contacts to AlGaAs/GaAs heterostructures with a 2D electron gas
https://doi.org/10.17073/1609-3577-2016-4-271-278
Abstract
This paper reviews the literature concerning the specifics of creating Ohmic contacts to AlGaAs/GaAs heterostructures with a 2D electron gas with high electron mobility. The process of annealing the contacts based of the Ni/Au/Ge system is considered, and the recommended parameters of the metalization layers are borrowed from the literature. This process allows reproducible fabrication of Ohmic contacts with a low electrical resistance to temperatures below 4K. Several mechanisms are analyzed which could result in the experimentally observed dependence of the contact parameters on crystallographic orientation. A method of contact fabrication with Au/ Ge/Pd metallization is described for which the contact is formed by mutual diffusion and interaction of the metals and the semiconductor in the solid phase at temperatures below 200 °C. This provides for high composition homogeneity of the contacts, a smooth metal / semiconductor boundary and can reduce the effect of orientation on the electric characteristics of the contact.
About the Authors
S. P. Kurochka
National University of Science and Technology MISiS
Russian Federation
Russian Federation
Sergey P. Kurochka — Cand. Sci (Eng.), Associate Professor.
4 Leninsky Prospekt, Moscow 119049.
M. V. Stepushkin
National University of Science and Technology MISiS; Kotel’nikov’ Institute of Radio Engineering and Electronics RAS
Russian Federation
Mikhail V. Stepushkin — PostGraduate Student MISiS, Senior Engineer Kotel’nikov’ Institute of Radio Engineering and Electronics RAS.
Russian Federation
Mikhail V. Stepushkin — PostGraduate Student MISiS, Senior Engineer Kotel’nikov’ Institute of Radio Engineering and Electronics RAS.
4 Leninsky Prospekt, Moscow 119049; 1 Vvedenskogo Sq., Fryazino, Moscow Reg. 141190.
V. I. Borisov
Kotel’nikov’ Institute of Radio Engineering and Electronics RAS
Russian Federation
Russian Federation
Vitaly I. Borisov — Cand. Sci. (Phys.−Math.), Head of Laboratory.
1 Vvedenskogo Sq., Fryazino, Moscow Reg. 141190.
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Review
For citations:
Kurochka S.P., Stepushkin M.V., Borisov V.I. Specifics of fabrication of Ohmic contacts to AlGaAs/GaAs heterostructures with a 2D electron gas. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2016;19(4):271-278. (In Russ.) https://doi.org/10.17073/1609-3577-2016-4-271-278
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