Silicon wafer strain under local photonic annealing
https://doi.org/10.17073/1609-3577-2017-2-142-147
Abstract
The effect of photon annealing on the occurrence of deformations in the crystal structure of boron−doped silicon wafers produced by the Czochralski (Cz−Si) was studied by the method of triple−X−ray diffraction. It was found that the traditional annealing of silicon wafers with polished surfaces on both sides by halogen lamps in Photonic Annealing (PA) and rapid thermal annealing modes (RTA) leads to compression deformation. The same process with the use of original photo− mask, which allows local processing produces multiple, spatially separated regions of the plate produced by Lосаl Photonic Annealing (LPA) at relatively low temperatures (less than 55 °C), gives rise to a tensile strain. This established effect is not observed if on the back side of the plates there is mechanical gettering layer. The mechanism explaining the experimental results can be used in the formation of the charge pump in the structure of the photo electric converters (PEC).
About the Authors
V. V. Starkov
Institute of Microelectronics Technology and High Purity Materials RAS
Russian Federation
Cand. Sci. (Eng.), Senior Researcher
Russian Federation
Cand. Sci. (Eng.), Senior Researcher
E. A. Gosteva
National University of Science and Technology «MISIS»
Russian Federation
Assistant
Russian Federation
Assistant
D. V. Irzhak
Institute of Microelectronics Technology and High Purity Materials RAS
Russian Federation
Cand. Sci. (Phys.–Math.), Deputy Directors
Russian Federation
Cand. Sci. (Phys.–Math.), Deputy Directors
D. V. Roshchupkin
Institute of Microelectronics Technology and High Purity Materials RAS
Russian Federation
Russian Federation
Dr. Sci. (Phys.–Math.)
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For citations:
Starkov V.V., Gosteva E.A., Irzhak D.V., Roshchupkin D.V. Silicon wafer strain under local photonic annealing. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2017;20(2):142-147. (In Russ.) https://doi.org/10.17073/1609-3577-2017-2-142-147
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