Preview

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

Advanced search
Fullscreen

For citations:


Kulanchikov Yu.O., Vergeles P.S., Yakimov E.B. Low-energy electron beam irradiation effect on Al/SiO2/Si structure voltage-farad characteristics. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2019;22(2):112-117. (In Russ.) https://doi.org/10.17073/1609-3577-2019-2-112-117

Views PDF (Rus): 481


Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.


ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)