APPLICATION OF IN SITU X–RAY REFLECTIVITY FOR DETERMINING PARAMETERS OF NANOSCALE SILICON FILMS
https://doi.org/10.17073/1609-3577-2013-1-35-37
Abstract
At present special importance attaches monitoring methods to measure the parameters of film structures directly during their formation — in situ methods. Application of these methods helps to ensure a film with desired characteristics, allowing quickly adjust process conditions. The paper describes the possibilities of the in situ X-ray reflectivity to determine the parameters of nanoscale films in real time of their formation. Experimental results on the magnetron deposition of nanoscale Si films and other materials on silicon substrates are presented.
About the Authors
I. S. Smirnov
Moscow institute of electronics and mathematic, Higher School of Economics
Russian Federation
Russian Federation
E. G. Novoselova
Moscow institute of electronics and mathematic, Higher School of Economics
Russian Federation
Russian Federation
A. A. Egorov
Moscow institute of electronics and mathematic, Higher School of Economics
Russian Federation
Russian Federation
I. S. Monakhov
Research Institute of Advanced Materials and Technologies
Russian Federation
Russian Federation
References
1. Новоселова, Е. Г. Материалы IV Междунар. науч. семинара «Современные методы анализа дифракционных данных» / Е. Г. Новоселова, И. С. Смирнов, М. Г. Тюрганов. – В. Новгород, 2008. – С. 150—152.
2. Мишетт, А. Оптика мягкого рентгеновского излучения / А. Мишетт. – М. : Мир, 1989. – 351 с.
3. Tolan, M. X-ray scattering from soft matter thin films. Material science and basic research. // M. Tolan / Springer tracts in modern physics. – 1999. – V. 148. – P. 197.
4. Виноградов, А. В. Зеркальная рентгеновская оптика / А. В. Виноградов, И. А. Брытов, А. Я. Грудский и др. – Л. : Машиностроение, 1989. – 463 с.
5. Белянин, А. Ф. Наноматериалы. IV. Тонкие пленки как наноструктурированные системы / А. Ф. Белянин, М. И. Самойлович. – М. : ЦНИТИ «Техномаш», 2008. – 256 с.
Review
For citations:
Smirnov I.S., Novoselova E.G., Egorov A.A., Monakhov I.S. APPLICATION OF IN SITU X–RAY REFLECTIVITY FOR DETERMINING PARAMETERS OF NANOSCALE SILICON FILMS. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(1):35-37. (In Russ.) https://doi.org/10.17073/1609-3577-2013-1-35-37
Views:
845
Email this article 