For citations:
Yugova T.G., Belov A.G., Kanevskii V.E., Kladova E.I., Knyazev S.N. Comparison of the results of optical and electrophysical measurements of free electron density in n-GaAs samples doped with tellurium. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2021;24(1):27-33. (In Russ.) https://doi.org/10.17073/1609-3577-2021-1-27-33
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