For citations:

Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M. ELECTRO-PHYSICAL AND PHOTOELECTRICAL CHARACTERISTICS OF MIS-STRUCTURES BASED ON HETERO-EPITAXIAL HGCDTE MBE WITH NON-UNIFORM DISTRIBUTION OF COMPOSITION. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(1):38-45. (In Russ.) https://doi.org/10.17073/1609-3577-2013-1-38-45