Simulation of Hall field elements based on nanoscale silicon-on-insulator heterostructures
https://doi.org/10.17073/1609-3577-2020-2-109-115
Abstract
The article is devoted to the issues of numerical simulation of field Hall sensors based on the "silicon on insulator" structure with two control gates. To solve the problem, a two-level local-one-dimensional computational model is used. At the first level, a series of one-dimensional Schrödinger—Poisson equations are solved, which describe the distribution of the electron density across the heterostructure in different sections. The obtained information is transmitted to the second level, where the current characteristics of the element are calculated. The numerical simulation results are compared with the experimental data obtained for field Hall sensors. Comparative analysis shows good agreement between calculated and experimental data. The developed computer model makes it possible to carry out a multivariate analysis of various heterostructures, which creates the basis for optimizing devices of the class under consideration.
Supporting agencies: This work was supported by the RFBR grant No. 19-08-01191.
About the Authors
V. N. Mordkovich
Institute of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences
Russian Federation
Russian Federation
6 Academician Ossipyan Str., Chernogolovka, Moscow Region, 142432
Victor N. Mordkovich: Dr. Sci. (Phys.-Math.), Chief Researcher
K. K. Abgaryan
Dorodnicyn Computing Centre of the Russian Academy of Sciences;
Moscow Aviation Institute (National Research University)
Russian Federation
Russian Federation
44 Vavilov Str., Moscow 119333;
4 Volokolamskoe shosse, 4, Moscow 125993
Karine K. Abgaryan: Dr. Sci. (Phys.-Math.), Head of the Department
D. L. Reviznikov
Dorodnicyn Computing Centre of the Russian Academy of Sciences;
Moscow Aviation Institute (National Research University)
Russian Federation
Russian Federation
44 Vavilov Str., Moscow 119333;
4 Volokolamskoe shosse, 4, Moscow 125993
Dmitry L. Reviznikov: Dr. Sci. (Phys.-Math.), Professor
A. V. Leonov
Institute of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences
Russian Federation
Russian Federation
6 Academician Ossipyan Str., Chernogolovka, Moscow Region, 142432
Alexey V. Leonov: Cand. Sci. (Phys.-Math.), Researcher
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Review
For citations:
Mordkovich V.N., Abgaryan K.K., Reviznikov D.L., Leonov A.V. Simulation of Hall field elements based on nanoscale silicon-on-insulator heterostructures. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2020;23(2):109-115. (In Russ.) https://doi.org/10.17073/1609-3577-2020-2-109-115
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