Numerical simulation of heat transfer in semiconductor heterostructures
https://doi.org/10.17073/1609-3577-2017-4-256-261
Abstract
The paper deals with the construction of numerical models of heat transfer in a multilayer AlAs/GaAs nanostructure. The problem is solved using a hybrid finite-difference-mesh-free method based on radial-basis functions. The obtained solutions are compared for various bases, as well as with and without normalization of the approximating model. The possibility of increasing the speed of computations due to the parallelizability of computations is investigated, it is shown that, using multiprocessor systems, one can achieve a significant increase in performance.
Keywords
About the Authors
K. K. AbgaryanRussian Federation
40 Vavilov Str., Moscow 119333;
4 Volokolamskoe Shosse, Moscow 125993
Karine K. Abgaryan: Cand. Sci. (Phys.-Math.), Head of the Department
I. S. Kolbin
Russian Federation
40 Vavilov Str., Moscow 119333
Ilya S. Kolbin: Cand. Sci. (Phys.-Math.), Researcher
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Review
For citations:
Abgaryan K.K., Kolbin I.S. Numerical simulation of heat transfer in semiconductor heterostructures. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2017;20(4):256-261. https://doi.org/10.17073/1609-3577-2017-4-256-261
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