Monolike ingot growth by directional solidification of Solar Grade silicon
https://doi.org/10.17073/1609-3577-2017-3-194-205
Abstract
In the frame of permanent objective to increase solar cell efficiency and to decrease production cost the monolike ingot process was designed which combine multicrystalline (mc) productivity and monocrystalline structure performances. As a raw material the mc-Solar Grade silicon (SoG-Si) was used because it is less expensive than the Si purified by gas chemical route (Siemens process or equivalent), Usage of the mc-SoG-Si for growing silicon ingots by monolike process should contribute to the ingot and wafer manufacturing cost decrease. SoG silicon using would be developed all the more fast since it enables to produce high efficiency solar cells. It is why the monolike process have been tested and optimized for Kazakhstan mc-SoG silicon. The objective of this work was study of the higher level content impurities influences on the crystal defect generation (mainly dislocations) of the monocrystalline structure. Visual monocrystalline structure, minority carrier lifetime mapping, and photoluminescence techniques were used to study the monolike ingots obtained from Kazakhstan’s mc-SoG silicon.
About the Authors
A. A. Betekbaev
“МК “KazSilicon” LLP
Kazakhstan
Kazakhstan
1 Komarova Str., Bastobe 041011
Azat A. Betekbaev: Chairman of the Supervisory Board
B. N. Mukashev
“МК “KazSilicon” LLP
Kazakhstan
Kazakhstan
1 Komarova Str., Bastobe 041011
Bulat N. Mukashev: Academician of NAS RK, Dr. Sci., Professor
L. Pelissier
ECM Greentech
France
France
109 Rue Hilaire de Chardonnet, Grenoble 38100
Laurent Pelissier: CEO
P. Lay
ECM Greentech
France
France
109 Rue Hilaire de Chardonnet, Grenoble 38100
Philippe Lay: PhD, Technical Director
G. Fortin
ECM Greentech
France
France
109 Rue Hilaire de Chardonnet, Grenoble 38100
Gautier Fortin: R&D Engineer
L. Bounaa
ECM Greentech
France
France
109 Rue Hilaire de Chardonnet, Grenoble 38100
Lotfi Bounaas: PhD, R&D Engineer
D. M. Skakov
“МК “KazSilicon” LLP
Kazakhstan
Kazakhstan
1 Komarova Str., Bastobe 041011
Danel M. Skakov: General Manager
D. A. Kalygulov
“МК “KazSilicon” LLP
Kazakhstan
Kazakhstan
1 Komarova Str., Bastobe 041011
Dastan A. Kalygulov
A. A. Pavlov
“МК “KazSilicon” LLP
Kazakhstan
Kazakhstan
1 Komarova Str., Bastobe 041011
Artem A. Pavlov: Engineer of PTD
T. S. Turmagambetov
“МК “KazSilicon” LLP
Kazakhstan
Kazakhstan
1 Komarova Str., Bastobe 041011
Tleuzhan S. Turmagambetov
V. V. Lee
“Kazakhstan Solar Silicon” LLP
Kazakhstan
Kazakhstan
223/6 Sogrinskaya Str., Ust-Kamenogorsk 070017
Vladimir V. Lee: General Director
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Review
For citations:
Betekbaev A.A., Mukashev B.N., Pelissier L., Lay P., Fortin G., Bounaa L., Skakov D.M., Kalygulov D.A., Pavlov A.A., Turmagambetov T.S., Lee V.V. Monolike ingot growth by directional solidification of Solar Grade silicon. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2017;20(3):194-205. (In Russ.) https://doi.org/10.17073/1609-3577-2017-3-194-205
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