For citations:
Orlov A.A., Rezvanov A.A. Simulation of the time dependent dielectric breakdown of a porous dielectric in the metallization system of integrated circuits of the modern topological level. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2021;24(2):102-106. (In Russ.) https://doi.org/10.17073/1609-3577-2021-2-102-106
Email this article 