Charge-coupling effect in a Hall field element based on thin-film SOI-MOS transistor
https://doi.org/10.17073/1609-3577-2021-1-57-62
Abstract
The influence of the coupling effect on the parameters of field Hall elements based on thin-film MOS transistors has been studied. Analysis of the development of today’s microelectronics shows the necessity of developing the element base for high performance sensors based on silicon technologies. One way to significantly improve the performance of sensing elements including magnetic field sensors is the use of thin-film transistors on the basis of silicon on insulator (SOI) structures. It has been shown that field Hall sensors (FHS) may become the basis of high-performance magnetic field sensors employing the coupling effect occurring in the double gate vertical topology of these sensing elements. Electrophysical studies of FHS have been conducted for different gate bias and power supply modes. The results show that the coupling effect between the gates occurs in FHS if the thickness of the working layer between the gates is 200 nm. This effect leads to an increase in the effective carrier mobility and hence an increase in the magnetic sensitivity of the material. Thus field Hall elements based on thin-film transistors fabricated using silicon technologies provide for a substantial increase in the magnetic sensitivity of the elements and allow their application in highly reliable magnetic field sensors.
About the Authors
A. V. Leonov
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
Russian Federation
Russian Federation
6 Academician Ossipyan Str., Chernogolovka, Moscow Region, 142432
Aleksey V. Leonov: Cand. Sci. (Phys.-Math.), Researcher
V. N. Murashev
National University of Science and Technology MISiS
Russian Federation
Russian Federation
4 Leninsky Prospekt, Moscow 119049
Victor N. Murashev: Dr. Sci. (Eng.), Professor
D. N. Ivanov
National University of Science and Technology MISiS
Russian Federation
Russian Federation
4 Leninsky Prospekt, Moscow 119049
Dmitry N. Ivanov: Postgraduate Student
V. D. Kirilov
National University of Science and Technology MISiS
Russian Federation
Russian Federation
4 Leninsky Prospekt, Moscow 119049
V. D. Kirilov
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Review
For citations:
Leonov A.V., Murashev V.N., Ivanov D.N., Kirilov V.D. Charge-coupling effect in a Hall field element based on thin-film SOI-MOS transistor. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2021;24(1):57-62. (In Russ.) https://doi.org/10.17073/1609-3577-2021-1-57-62
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