Influence of in situ photoexcitation on the structure of a damaged layer in SOI | Shcherbachev | Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhnikii

ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)

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Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

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Shcherbachev K.D., Bublik V.T., Voronova M.I. Influence of in situ photoexcitation on the structure of a damaged layer in SOI. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2012;(3):68-71. (In Russ.) https://doi.org/10.17073/1609-3577-2012-3-68-71

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ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)

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About the Authors

K. D. Shcherbachev
National University of Science and Technology MISiS
Russian Federation

кандидат физ.−мат. наук, старший научный сотрудник, НИТУ «МИСиС», 119049, г. Москва, Ленинский просп., д. 4.

V. T. Bublik
National University of Science and Technology MISiS
Russian Federation

доктор физ.−мат. наук, профессор, НИТУ «МИСиС», 119049, г. Москва, Ленинский просп., д. 4.

M. I. Voronova
National University of Science and Technology MISiS
Russian Federation

научный сотрудник, НИТУ «МИСиС», 119049, г. Москва, Ленинский просп., д. 4.

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