Influence of in situ photoexcitation on the structure of a damaged layer in SOI
https://doi.org/10.17073/1609-3577-2012-3-68-71
Abstract
«Silicon−on−insulator» (SOI) structures irradiated with Ar+ ions with an energy of 100 keV and doses of 2 ⋅ 1013 and 4 ⋅ 1013 cm−2 were investigated by high−resolution X−ray diffraction and Rutherford backscattering spectroscopy methods.
Such a choice of implantation energy allowed us to set the maximum of projected ions length in the middle of the silicon layer and to minimize possible changes of electric and elastic force fields of the internal dielectric during irradiation. The implantation was accompanied by an irradiation using UV lamp (photoexcitation in situ) with a flux of 25 mW ⋅ cm−2. It was found that in the case of low doses the photoexcitation leads to cluster formation both near the sample surface and in the area of maximum strain. At the dose of 4 ⋅ 1013 cm−2, when surface amorphization starts, the photoexcitation no longer influenced the redistribution of radiation−induced defects. The photoexcitation favors the sink of interstitial type defects towards the surface.
About the Authors
K. D. Shcherbachev
National University of Science and Technology MISiS
Russian Federation
Russian Federation
V. T. Bublik
National University of Science and Technology MISiS
Russian Federation
Russian Federation
M. I. Voronova
National University of Science and Technology MISiS
Russian Federation
Russian Federation
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Review
For citations:
Shcherbachev K.D., Bublik V.T., Voronova M.I. Influence of in situ photoexcitation on the structure of a damaged layer in SOI. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2012;(3):68-71. (In Russ.) https://doi.org/10.17073/1609-3577-2012-3-68-71
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