Evaluation of the effect of FinFET structure parameters on electrical characteristics using TCAD modeling tools
https://doi.org/10.17073/1609-3577-2021-4-222-228
Abstract
Using TCAD modeling, the effect of changing FinFET structure parameters, such as gate stack layer sizes, rib shape, or doping levels, on the electrical characteristics of the device is investigated.
Supporting agencies: This work was supported by a joint grant from the Russian Foundation for Basic Research and the China Scientific Research Foundation (grant No. 20-57-53004).
About the Authors
K. O. Petrosyants
HSE Tikhonov Moscow Institute of Electronics and Mathematics;
Institute for Design Problems in Microelectronics of the Russian Academy of Sciences
Russian Federation
Russian Federation
34 Tallinskaya Str., Moscow 123458;
3 Sovetskaya Str., Zelenograd, Moscow 124365
Konstantin O. Petrosyants — Dr. Sci. (Eng.), Professor, Professor-Researcher,
D. S. Silkin
HSE Tikhonov Moscow Institute of Electronics and Mathematics
Russian Federation
Russian Federation
34 Tallinskaya Str., Moscow 123458
Denis S. Silkin — Cand. Sci. (Eng.), Researcher
D. A. Popov
HSE Tikhonov Moscow Institute of Electronics and Mathematics
Russian Federation
Russian Federation
34 Tallinskaya Str., Moscow 123458
Dmitriy A. Popov — Cand. Sci. (Eng.), Associate Professor
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Review
For citations:
Petrosyants K.O., Silkin D.S., Popov D.A. Evaluation of the effect of FinFET structure parameters on electrical characteristics using TCAD modeling tools. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2021;24(4):222-228. (In Russ.) https://doi.org/10.17073/1609-3577-2021-4-222-228
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