For citations:

Еnisherlova K.L., Seidman L.A., Bogolyubova S.Yu. Effect of treatment in nitrogen plasma on the electrical parameters of AlGaN/GaN heterostructures. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2022;25(3):227-237. (In Russ.) https://doi.org/10.17073/1609-3577-2022-3-227-237