For citations:

Afanasyev M.S. Mechanism of formation of a film-forming environment during RF sputtering of ferroelectrics BaxSr1-xTiO3. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2022;25(3):238-244. (In Russ.) https://doi.org/10.17073/1609-3577-2022-3-238-244