Comparison between optical and electrophysical data on hole concentration in zinc doped p-GaAs

Optical and electrophysical properties of Cz-grown zinc doped p-GaAs samples have been investigated. Middle-infrared reflection spectra of ten p-GaAs samples have been obtained. Galvanomagnetic Van der Pau measurements have been made on these samples also, and the values of resistivity and Hall coefficient have been calculated. All experiments have been carried out at room temperature.
Reflection spectra have been processed by Kramers–Kronig relations. The spectral dependences of real and imaginary parts of complex dielectric permittivity have been obtained and loss function has been calculated. The value of characteristic wave number corresponding to high-frequency plasmon-phonon mode has been determined by loss function maximum position.
The theoretical calculations have been made, and the dependence has been obtained which gave the possibility to determine heavy hole concentration value at T = 295K by the value of characteristic wave number. Then by comparison of optical and Hall data the values of light hole mobility to heavy hole mobility ratio have been determined. This mobility ratio has been shown to be equal to (1.9–2.8) which is considerably less, than predicted theoretical value based on assumption that both light and heavy holes are scattered by optical phonons. It has been suggested that scattering mechanisms of light and heavy holes might be quite different.

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