For citations:
Guskova O.P., Vorotynthev V.M., Shobolov E.L., Abrosimova N.D. Influence of Ge Ion Implantation into Silicon Dioxide/Silicon Structure on Charge Accumulation under Low–Energy Stationary Radiation. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2012;(4):28-32. (In Russ.) https://doi.org/10.17073/1609-3577-2012-4-3-8