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Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

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Guskova O.P., Vorotynthev V.M., Shobolov E.L., Abrosimova N.D. Influence of Ge Ion Implantation into Silicon Dioxide/Silicon Structure on Charge Accumulation under Low–Energy Stationary Radiation. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2012;(4):28-32. (In Russ.) https://doi.org/10.17073/1609-3577-2012-4-3-8



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ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)