Quantum mechanical simulation of polarization switching in HfO2 crystals | Zhuravlev | Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhnikii

ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)

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Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

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Zhuravlev A.A., Abgaryan K.K., Reviznikov D.L. Quantum mechanical simulation of polarization switching in HfO2 crystals. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2023;26(3):198-203. (In Russ.) https://doi.org/10.17073/1609-3577j.met202309.553

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ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)

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About the Authors

A. A. Zhuravlev
Federal Research Center “Computer Science and Control” of the Russian Academy of Sciences
Russian Federation

44-2 Vavilova Str., Moscow 119333

Andrey A. Zhuravlev — Junior Researcher

K. K. Abgaryan
Federal Research Center “Computer Science and Control” of the Russian Academy of Sciences
Russian Federation

44-2 Vavilova Str., Moscow 119333

Karine K. Abgaryan — Dr. Sci. (Phys.-Math.), Chief Researcher, Head of Department

D. L. Reviznikov
Federal Research Center “Computer Science and Control” of the Russian Academy of Sciences
Russian Federation

44-2 Vavilova Str., Moscow 119333

Dmitry L. Reviznikov — Dr. Sci. (Phys.-Math.), Professor, Leading Researcher

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