For citations:
Еnisherlova K.L., Mikhaylov I.A., Seidman L.A., Kirilenko E.P., Kolkovsky Yu.V. Modeling the processes of formation of defects that form deep levels in SiON/AlGaN/GaN. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2023;26(3):204-216. (In Russ.) https://doi.org/10.17073/1609-3577j.met202306.556
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