For citations:

Pashayev I.G. Study of Electrical Properties of Schottky Diodes Fabricated on Silicon with Different Metal Layers. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2012;(4):37-40. (In Russ.) https://doi.org/10.17073/1609-3577-2012-4-37-40