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Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

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Komarovskiy N.Yu., Parkhomenko Yu.N., Molodtsova E.V., Zhuravlev E.O., Chuprakov V.A., Kozlov R.Yu., Knyazev S.N., Belov A.G. Physical and technological causes of channel inhomogeneity in InSb single crystals heavily doped with Te. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2024;27(1):85-95. (In Russ.) https://doi.org/10.17073/1609-3577j.met202312.571

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ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)