For citations:
Komarovskiy N.Yu., Parkhomenko Yu.N., Molodtsova E.V., Zhuravlev E.O., Chuprakov V.A., Kozlov R.Yu., Knyazev S.N., Belov A.G. Physical and technological causes of channel inhomogeneity in InSb single crystals heavily doped with Te. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2024;27(1):85-95. (In Russ.) https://doi.org/10.17073/1609-3577j.met202312.571