Modeling the functioning of semiconductor devices taking into account defects in the atomic structure
https://doi.org/10.17073/1609-3577j.met202310.604
Abstract
The paper studies the testing of modern numerical methods for studying the electrophysical characteristics of semiconductor devices. Using the diffusion-drift model, the electrophysical characteristics of the selected transistor are calculated. An original program code was also developed for modeling ballistic electron transport in nanotransistors (topological dimensions of ~10 nm) taking into account defects in the atomic structure. Modeling the characteristics of a field-effect nanotransistor showed that a violation of the crystal structure of the transistor leads to degradation of the I–V curve.
About the Author
I. K. Gainullin
Lomonosov Moscow State University
Russian Federation
Russian Federation
1 Leninskiye Gory, Moscow 119991
Ivan K. Gainullin — Dr. Sci. (Phys.-Math.), Associate Professor, Department of Physics
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Review
For citations:
Gainullin I.K. Modeling the functioning of semiconductor devices taking into account defects in the atomic structure. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2024;27(2):140-145. (In Russ.) https://doi.org/10.17073/1609-3577j.met202310.604
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