Nanosized Silicon Grown with HCl : HF : C2H5OH Electrolyte
https://doi.org/10.17073/1609-3577-2012-4-45-48
Abstract
Results of experimental work with nanosized silicon (NcSi) samples which are not degraded under the action of intense laser radiation have been obtained. We show that that a significant increase in the intensity of the
photoluminescence signal from NC may be caused by the structural features of their formation and by the presence of a thin SiO2 layer on the surface of the nanocrystals.
About the Authors
Yu. N. Parkhomenko
OAO Giredmet
Russian Federation
Russian Federation
A. I. Belogorokhov
OAO Giredmet
Russian Federation
Russian Federation
A. P. Bliev
GOU VPO K.L. Khetagurov SOGU
Russian Federation
Russian Federation
V. G. Sozanov
GOU VPO K.L. Khetagurov SOGU
Russian Federation
Russian Federation
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Review
For citations:
Parkhomenko Yu.N., Belogorokhov A.I., Bliev A.P., Sozanov V.G. Nanosized Silicon Grown with HCl : HF : C2H5OH Electrolyte. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2012;(4):45-48. (In Russ.) https://doi.org/10.17073/1609-3577-2012-4-45-48
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