Электролюминесценция эрбия в пленках In2O3:Er, ВЧ-магнетронно напыленных на подложку кремния

Пленки In₂O₃:Er были осаждены на подложку кремния с помощью ВЧ-магнетронного распыления-осаждения. При этом формируется твердый раствор ((In_1-xEr_x)₂O₃). В исследуемой гетероструктуре: подложка-n-Si/пленка-In₂O₃:Er/контакт-ITO при пропускании тока наблюдается электролюминесценция эрбия на длине волны 1,534 мкм. Предложен механизм возбуждения атомов эрбия с помощью рекомбинации электрон-дырочных пар, когда электрон находится в зоне проводимости оксида индия, а дырка в проводящем канале посередине запрещенной зоны, обусловленном дефектными состояниями. Таким образом, энергия электрон-дырочных пар меньше ширины запрещенной зоны оксида индия и составляет 1,56 эВ. Тогда при рекомбинации электрон-дырочных пар сначала резонансно возбуждается третье возбужденное состояние иона Er^{3+ 4}I_9/2 (1,53 эВ). Затем происходит безизлучательная релаксация к первому возбужденному состоянию ⁴I_13/2 (0,81 эВ) и далее переход в основное состояние ⁴I_15/2 с испусканием фотона на длине волны 1,534 мкм.

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