RESEARCH OF ACCEPTOR IMPURITY THERMAL ACTIVATION IN GAN : MG EPITAXIAL LAYERS
https://doi.org/10.17073/1609-3577-2013-3-43-46
Abstract
The effect of thermal annealing of GaN:Mg layers on acceptor impurity activation has been investigated. Hole concentration increased and mobility decreased with an increase in thermal annealing temperature. The sample annealed at 1000 oC demonstrated the lowest value of resistivity. Rapid thermal annealing (annealing with high heating speed) considerably improved the efficiency of Mg activation in the GaN layers. The optimum time of annealing at 1000 oC has been determined. The hole concentration increased by up to 4 times compared to specimens after conventional annealing.
About the Authors
A. V. Mazalov
Sigm Plus Co.
Russian Federation
Russian Federation
D. R. Sabitov
Sigm Plus Co.
Russian Federation
Russian Federation
V. A. Kureshov
Sigm Plus Co.
Russian Federation
Russian Federation
A. A. Padalitsa
Sigm Plus Co.
Russian Federation
Russian Federation
A. A. Marmalyuk
Sigm Plus Co.
Moscow State University of Fine Chemical Technologies
Russian Federation
Russian Federation
R. Kh. Akchurin
Moscow State University of Fine Chemical Technologies
Russian Federation
Russian Federation
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Review
For citations:
Mazalov A.V., Sabitov D.R., Kureshov V.A., Padalitsa A.A., Marmalyuk A.A., Akchurin R.Kh. RESEARCH OF ACCEPTOR IMPURITY THERMAL ACTIVATION IN GAN : MG EPITAXIAL LAYERS. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(3):43-46. (In Russ.) https://doi.org/10.17073/1609-3577-2013-3-43-46
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