HIGH–RESOLUTION X–RAY DIFFRACTOMETRY OF PROTON IRRADIATED SILICON
https://doi.org/10.17073/1609-3577-2013-3-66-69
Abstract
We have studied the transformation of radiation defects generated by proton implantation in n−type silicon crystals with a resistivity of 100 Ohm · cm. The measurements were conducted using high−definition X−ray diffraction (HDD). We show that sequential implantation of protons with energies of 100 + 200 + 300 keV and a fluence of 2 · 1016sm−2 results in the formation of a damaged layer with an increased lattice parameter and a thickness of 2.4 mm. This layer is formed by radiation−induced defects both of vacancy and interstitial types. Vacuum annealing of the irradiated crystals at 600 °C enlarges the radiation−induced defects while reducing their number. After annealing at 1100 °C interstitial type defects prevail.
About the Authors
I. S. Smirnov
Moscow Institute of Electronics and Mathematic, Higher School of Economics
Russian Federation
Russian Federation
I. G. Dyachkova
Moscow Institute of Electronics and Mathematic, Higher School of Economics
Russian Federation
Russian Federation
E. G. Novoselova
Moscow Institute of Electronics and Mathematic, Higher School of Economics
Russian Federation
Russian Federation
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Review
For citations:
Smirnov I.S., Dyachkova I.G., Novoselova E.G. HIGH–RESOLUTION X–RAY DIFFRACTOMETRY OF PROTON IRRADIATED SILICON. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(3):66-69. (In Russ.) https://doi.org/10.17073/1609-3577-2013-3-66-69
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