For citations:
Smirnov I.S., Dyachkova I.G., Novoselova E.G. HIGH–RESOLUTION X–RAY DIFFRACTOMETRY OF PROTON IRRADIATED SILICON. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(3):66-69. (In Russ.) https://doi.org/10.17073/1609-3577-2013-3-66-69
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