STATISTICAL ANALYSIS OF GE INFLUENCE ON RADIATION AND THERMAL STABILITY OF THE ELECTROPHYSICAL CHARACTERISTICS OF CZ–SI
BASED DEVICE N—P—N—P–STRUCTURES
https://doi.org/10.17073/1609-3577-2013-4-42-48
Abstract
The characteristics of low−power and high−power thyristors basen of dislocation−free single crystal silicon doped with ger- manium to the concentration range NGe ~ (0.05—1.5) • 1020 cm−3 have been investigated. The criterial parameters of thyristors exposed to radiation and high temperature gradients have been estimated using experimental data processing methods in the STATISTICA and MathCAD environments. We show the appropriateness of using germanium doped silicon for increasing the thermal stability and radiation strength of the devices exposed to γ−radiation in the range of doses of up to 2.94 • 106 mSv.
About the Authors
S. V. Bytkin
Zaporizhstal Integrated Iron & Steel Works JSC
Ukraine
Ukraine
T. V. Kritskaya
Zaporozhye State Engineering Academy
Ukraine
Ukraine
S. P. Kobeleva
National University of Science and Technology MISIS
Russian Federation
Russian Federation
References
1. Catrene scientific committee eorking group: Integrated power & energy efficiency [Elektronnyi document] (http://www. catrene.org/web/downloads/IPEE_Report_by _Catrene%20Sci._ Comm.pdf).
2. Weigel , W. −D. Moderne drehstromantriebstechn ik — stand und perspektiven / W.−D. Weigel // ZEVrail Glasers Annalen (Tagungsband SFT Graz). − 2002. − P. 112—125.
3. Kaminski, N. Vozdeistvie kosmicheskogo izlucheniya na intensivnost‘ otkazov IGCT [Elektronnyi document] / N. Kaminski, A. Chekmarev, I. Korzina, T. Styasni // Silovaya elektronika. − 2008. − N 1. − P. 30—32 (http://www.power−e.ru/2008_1_30.php).
4. O Federal‘noi celevoi programme «Nacional‘naya tehnologicheskaya baza» na 2007—2011 gody (v red. Postanovleniya Pravitel‘stva RF ot 26.11.2007 N 809). [Elektronnyi document] (http:// www.intpark.noolab.ru/uploads/1245030251.doc).
5. Kritskaya, T. V. Upravlenie svoistvami i razrabotka pro- myshlennoi tehnologii monokristallicheskogo kremniya dlya elektroniki i solnechnoi energetiki: Diss. d−ra. tehn. n. − Zaporozh’e, 2006. − 375 p.
6. Bytkin, S. V. Silicon doped with germanium (n−Si<Ge>) usage for manufacturing of radiation hardened devices and integrated circuits. / S. V. Bytkin // Fourth Europ. Conf. on Radiation and Its Effects on Components and Systems Proceedings. − Cannes (France), 1997. − P. 141—146.
7. Bytkin, S. V. Materialy i processy v tehnologii kremnievyh priborov, ustoichivyh k deistviyu ioniziruyushih izluchenii: analiz effektivnosti primeneniya / S. V. Bytkin, O. V. Bytkina − Zaporozh’e : Izd−vo ZGIA, 1997. − 84 p.
8. Bytkin, S. V. Radiacionnaya stoikost’ planarnyh n—p— n−struktur, izgotovlennyh iz monokristallov kremniya s razlichnoi koncentraciei germaniya / S. V. Bytkin, T. V. Kritskaya // Skladni sistemi i procesi − 2003. − N 2. − P. 90—96.
9. Barabash L. I. Сучасні методи підвищення радіаційної стійкості напівпровідникових матеріалів / L. I. Barabash, I. M. Vishnevs'kii, A. A. Groza, A. Ya. Karpenko, P. G. Litovchenko, M. I. Starchik // Voprosy atomnoi nauki i tehniki. Ser. 90: Fizika radiacionnyh povrezhdenii i radiacionnoe materialovedenie. − 2007. − N 2. − P. 182—189.
10. Defense technology strategy for the demands of the 21st century [Elektronnyi document] (http://www.science.mod.uk/mod- www/content/dts_complete.pdf).
11. Borovikov, V. STATISTICA. Iskusstvo analiza dannyh na komp‘yutere. Dlya professionalov / V. Borovikov. − SPb. : Piter, 2003. − 688 p.
12. Kudryavcev, V. M. Mathcad 11: Polnoe rukovodstvo po russkoi versii. / V. M. Kudryavcev −M. : DMK Press, 2005. − 592 p.
13. Gerlah, V. Tiristory / V. Gerlah − M. : Energoatomizdat, 1985. − 345 p.
14. Kritskaya, T. V. Uprugie napryazheniya v kremnii s vnu- trennimi getterami / T. V. Kritskaya, V. E. Kustov, N. A. Tripachko, V. I. Shahovcov // Elektronnaya tehnika. Ser. Materialy. − 1989. − Iss. 4 (241). − P. 41—43.
15. Kritskaya, T. V. Osobennosti spektrov IK−poglosheniya termodonorov v kristallah Si : Ge / T. V. Kritskaya, L. I. Hirunenko, V. I. Shahovcov, V. I. Yashnik // FTP. − 1990. − T. 24, Iss. 6. − P. 1129— 1132.
16. Kustov, V. E . Vnutrennie uprugie deformacii v kremnii / V. E.Kustov, T. V. Kritskaya, N. A. Tripachko, L. I. Hirunenko, V. I. Shahovcov, V. I. Yashnik // Neorgan. materialy. − 1991. − N 6. − P. 1116—1118.
17. Khirunenko, L . I. Oxygen in silicon doped with isovalent impurities. / L. I. Khirunenko, Yu. V. Pomozov, M. G. Sosnin, V. K. Shinkarenko // Physica B. − 1999. − V. 273−274. − P. 317—321.
Review
For citations:
Bytkin S.V., Kritskaya T.V., Kobeleva S.P. STATISTICAL ANALYSIS OF GE INFLUENCE ON RADIATION AND THERMAL STABILITY OF THE ELECTROPHYSICAL CHARACTERISTICS OF CZ–SI
BASED DEVICE N—P—N—P–STRUCTURES. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(4):42-48. (In Russ.) https://doi.org/10.17073/1609-3577-2013-4-42-48
Views:
884
Email this article 