EFFECTS OF THE FORMATION METHOD OF EARLY GAP BUFFER MONOLAYERS ON THE STRAIN STATE OF GAAS FILMS ON VICINAL SI(001) SUBSTRATES
https://doi.org/10.17073/1609-3577-2013-4-48-51
Abstract
A significant dependence of the strain state of GaAs film lattice grown by molecular−beam epitaxy (MBE) on the nucleation method of early GaP buffer layers (50 nm) on the vicinal substrate Si(001) 4° around the <011> axis was discovered. GaP growth started layer−by−layer with a gallium or a phosphorus sublayer. If GaP nucleated with a gallium sublayer, the GaAs film has a significant lattice rotation around the <011> axis. If the buffer starts forming with a phosphorus layer the GaAs film evidently rotates around the <001> axis. The film relaxation degree ex- ceeds 100%, and the film is in a laterally strained state. Analysis was carried out using the triclinic distortion model. A reciprocal space scattering map was obtained using X−ray diffraction in a three−axis low resolution setup. The map clearly shows that the GaAs film lattice is rotated.
About the Authors
I. D. Loshkarev
Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
Russian Federation
Russian Federation
A. P. Vasilenko
Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
Russian Federation
Russian Federation
E. M. Trukhanov
Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
Russian Federation
Russian Federation
A. V. Kolesnikov
Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
Russian Federation
Russian Federation
A. S. Ilin
Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
Russian Federation
Russian Federation
M. A. Putyato
Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
Russian Federation
Russian Federation
B. R. Semyagyn
Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
Russian Federation
Russian Federation
V. V. Preobrazhensky
Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
Russian Federation
Russian Federation
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Review
For citations:
Loshkarev I.D., Vasilenko A.P., Trukhanov E.M., Kolesnikov A.V., Ilin A.S., Putyato M.A., Semyagyn B.R., Preobrazhensky V.V. EFFECTS OF THE FORMATION METHOD OF EARLY GAP BUFFER MONOLAYERS ON THE STRAIN STATE OF GAAS FILMS ON VICINAL SI(001) SUBSTRATES. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(4):48-51. (In Russ.) https://doi.org/10.17073/1609-3577-2013-4-48-51
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