CHARGE RELAXATION BASED INTEGRAL–DIFFERENTIAL METHOD OF SEMICONDUCTOR ENERGY LEVEL TEMPERATURE SPECTROSCOPY
https://doi.org/10.17073/1609-3577-2013-4-58-62
Abstract
A new method of measuring the parameters of shallow and medium−depth levels in semiconductor band gaps has been presented. The method is based on temperature scanning, hardware integration and subsequent differentiation by the duration of the relaxation charge excitation pulse of the energy levels during the application of a small amplitude displacement meander to the barrier structure. Experimental results of research AlGaN/ InGaN/GaN of the structures are resulted.
About the Author
F. I. Manyakhin
National University of Science and Technology MISIS
Russian Federation
Russian Federation
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Review
For citations:
Manyakhin F.I. CHARGE RELAXATION BASED INTEGRAL–DIFFERENTIAL METHOD OF SEMICONDUCTOR ENERGY LEVEL TEMPERATURE SPECTROSCOPY. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(4):58-62. (In Russ.) https://doi.org/10.17073/1609-3577-2013-4-58-62
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